最大源漏极电压Vds
Drain-Source Voltage | -30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 20V |
最大漏极电流Id
Drain Current | -5A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 98mΩ@ VGS = -4V, ID = -1.5A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -1.2~-2.6V |
耗散功率Pd
Power Dissipation | 1.6W |
| Description & Applications | P-Channel MOS Silicon FET High-Speed Switching Applications Features • Low ON-resistance. • High-speed switching. • 4V drive. |
| 描述与应用 | P沟道MOS硅FET 高速开关应用 特点 •低导通电阻。 •高速开关。 •4V驱动器。 |