| Collector-Base Voltage(VCBO) Q1/Q2 |
-50V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 |
-50V/50V |
| Collector Current(IC) Q1/Q2 |
-100mA/100mA |
| Q1 Input Resistance(R1) |
47KΩ/Ohm |
| Q1 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| (R1/R2) Q1 Resistance Ratio |
1 |
| Q2 Input Resistance(R1) |
47KΩ/Ohm |
| Q2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2 (R1/R2)Resistance Ratio |
1 |
| DC Current Gain(hFE) |
|
| Transtion Frequency(fT) |
250MHz |
| Power Dissipation |
150mW/0.15W |
| Description & Applications |
Features •Dual Common Base−Collector Bias Resistor Transistors •Both the DTA144E and DTC144E in a EMT or UMT package. |
| 描述与应用 |
特点 •双共基极 - 集电极偏置电阻晶体管 •两个DTA144E一个EMT或UMT包的DTC144E |