| Collector-Base Voltage(VCBO)Q1/Q2 |
50V/50V |
| Collector-Emitter Voltage(VCEO)Q1/Q2 |
50V/50V |
| Collector Current(IC)Q1/Q2 |
100MA/100MA |
| Q1基极输入电阻R1 Input Resistance(R1) |
47KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
47KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| DC Current Gain(hFE)Q1/Q2 |
|
| Transtion Frequency(fT)Q1/Q2 |
250MHz/250MHZ |
| Power DissipationQ1/Q2 |
150mW/0.15W |
| Description & Applications |
Features •General purpose (dual digital transistors) •Two DTC144E chips in a EMT or UMT or SMT package. |
| 描述与应用 |
特点 •通用（双数字晶体管） •两个DTC144E的在EMT或UMT或SMT封装的芯片 |