|
V(BR) CBO
Collector-Base Voltage
|
-50V |
|
V(BR) CEO
Collector-Emitter Voltage
|
-50V |
| Collector Current(IC) |
-100MA |
| Input Resistance(R1) |
10KΩ |
| Base-Emitter Resistance(R2) |
10KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) |
1 |
| DC Current Gain(hFE) |
50 |
| Transtion Frequency(fT) |
100MHZ |
| Power Dissipation （Pd） |
0.2W |
| Description & Applications |
Features•PNP Epitaxial Planar Silicon Composite Transistor•On-chip bias resistors (R1=10kΩ, R2=10kΩ)•Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.•The FC113 is formed with two chipe |
| Technical Documentation Download |
Read Online |