最大源漏极电压Vds
Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -8V |
最大漏极电流Id
Drain Current | -2.3A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 225mΩ@ VGS = -1.8V, ID = -1.5A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.4~-1.5V |
耗散功率Pd
Power Dissipation | 960mW/0.96W |
| Description & Applications | Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Applications • Power management • Load switch Features • High performance trench technology for extremely low RDS(ON) • Super SOTTM -6 package: small footprint |
| 描述与应用 | 双P沟道1.8V指定的PowerTrench MOSFET 概述 这些P沟道1.8V指定MOSFET采用飞兆半导体先进的功率沟槽进程，已特别定制生产 尽量减少对通态电阻和出色的开关性能但为保持低栅极电荷。 应用 •电源管理 •负荷开关 特点 •高性能沟道技术极低的RDS（ON） •超级SOTTM-6包装：占地面积小 |