最大源漏极电压Vds
Drain-Source Voltage | -12V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -8V |
最大漏极电流Id
Drain Current | -700mA/0.7A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 650mΩ@ VGS = -1.8V, ID = -0.4A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.4~-1.5V |
耗散功率Pd
Power Dissipation | 300mW/0.3W |
| Description & Applications | P-Channel 1.8V Specified Power Trench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch Features • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package |
| 描述与应用 | P沟道1.8V额定功率沟道MOSFET 概述 此P沟道MOSFET的1.8V指定使用飞兆半导体先进的低电压功率沟槽过程。它已被优化的电池电源管理应用。 应用 •电池管理 •负荷开关 特点 •低栅极电荷 •高性能沟道技术极低的RDS（ON） •紧凑型工业标准SC70-6表面贴装封装 |