Home
Cart0
Inventory:0 Min Order:10
Parameters
Related model

×

Parameters:

  • Model:FDJ1028N
  • Manufacturer:HUABAN
  • Date Code:05+nopb 05+PB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:f3
  • Package:SOT-563

最大源漏极电压Vds
Drain-Source Voltage
20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
3.2A
源漏极导通电阻Rds
Drain-Source On-State Resistance
130mΩ@ VGS = 2.5V, ID =2.7A
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.6~1.5V
耗散功率Pd
Power Dissipation
1.5W
Description & ApplicationsN-Channel 2.5 Vgs Specified Power Trench MOSFET General Description This dual N-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Applications Battery management Features Low gate charge High performance trench technology for extremely low RDS(ON) FLMP SC75 package: Enhanced thermal performance in industry-standard package size
描述与应用N沟道2.5 VGS额定功率沟槽MOSFET 概述 这种双N沟道2.5V指定的MOSFET采用飞兆半导体先进的低电压的PowerTrench过程。 FLMP SC75封装,RDS(ON)和热性能的设备进行了优化,电池电源管理应用。 应用 电池管理 特点 低栅极电荷 高性能沟道技术极低的RDS(ON) FLMP SC75封装:增强热表现在行业标准包装尺寸

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
FDJ1028N
*Title:
Message:
*Code: