| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.07Ω/Ohm @2A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | N-Channel 1.8 Vgs Specified PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications Features ·2 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 80 mW @ VGS = 2.5 V RDS(ON) = 120 mW @ VGS = 1.8 V Low gate charge (4.5 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) |
| 描述与应用 | N沟道1.8 VGS指定的PowerTrench MOSFET 概述 此20V N沟道MOSFET采用飞兆半导体的高 电压的PowerTrench过程。它已被优化为 电源管理应用。 低栅极电荷（4.5 nC型） 开关速度快 高性能沟道技术极 低RDS（ON） |