集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 25V |
集电极连续输出电流IC
Collector Current(IC) | 25mA |
截止频率fT
Transtion Frequency(fT) | 650MHz |
直流电流增益hFE
DC Current Gain(hFE) | 60 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc
Power Dissipation | 330mW/0.33W |
| Description & Applications | SOT23 NPN SILICON PLANAR RF TRANSISTOR High fT=650MHz Maximum capacitance 0.7pF Low noise < 5dB at 500MHz |
| 描述与应用 | SOT23 NPN硅平面RF晶体管 高FT =650MHz 最大容量的0.7 pF 频率为500MHz时低噪声<5dB |