| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V/60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V/50V |
| 集电极连续输出电流IC Collector Current(IC) | -1A/1A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 140~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | -180mV/120mV |
| 耗散功率Pc Power Dissipation | 1000mW |
| Description & Applications | Features • PNP/NPN Epitaxial Planar Silicon Transistor • Push-Pull Circuit Applications • Composite type with 2 transistors of PNP transistor and NPN transistor,facilitating high-density mounting. • The FP203 is formed with chips, being equivalent to the 2SB1122 and 2SD1622, placed in one package. |
| 描述与应用 | 特点 •PNP/ NPN平面外延硅晶体管 •推挽电路应用 •复合型2个晶体管的PNP晶体管和NPN晶体管，促进高密度安装。 •FP203形成芯片，相当于2SB1122和2SD1622，放置在一个包装 |