| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| Q1基极输入电阻R1 Input Resistance(R1) | 150MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 140~400 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | -350mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 2000mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • PNP Epitaxial Planar Silicon Transistor • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX503 houses two chips, each being equivalent to the 2SB1202, in one package. • Matched pair characteristics. |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •PNP外延平面硅晶体管 •在一个封装中包含2个PNP晶体管，促进高密度安装 •FX503房子两个芯片组成，每个相当于2SB1202，在一个封装中。 •配对特性。 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |