集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −30V |
集电极连续输出电流IC
Collector Current(IC) | -6A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~300 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -440mV/-0.44V |
耗散功率Pc
PoWer Dissipation | 3W |
| Description & Applications | PNP SILICON PLANAR HIGH CURRENT TRANSISTORS FEATURES Extremely low equivalent on-resistance 6 Amps continuous current Up to 20 Amps peak current Very low saturation voltage Excellent hFE characteristics specified upto 20 Amps |
| 描述与应用 | PNP硅平面高电流晶体管 特点 极低的等效导通电阻 6安培连续电流 高达20安培的峰值电流 非常低的饱和电压 优秀HFE特性高达20安培 |