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Parameters:

  • Model:HAT1111C
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:UA
  • Package:SOT-363/SC70-6/CMFPAK - 6)

最大源漏极电压Vds
Drain-Source Voltage
-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-20V
最大漏极电流Id
Drain Current
-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.245Ω @-1A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1--2V
耗散功率Pd
Power Dissipation
1.25W
Description & Applications• Low on-resistance RDS(on) = 41 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V gate drive devices. • High density mounting
描述与应用•低导通电阻 RDS(ON) = 41MΩ(典型值)。 (VGS=-4.5 V) •低驱动电流。 •1.8 V门驱动装置。 •高密度安装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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HAT1111C
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