集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 500mA/0.5A |
截止频率fT
Transtion Frequency(fT) | 900MHz |
直流电流增益hFE
DC Current Gain(hFE) | 40~120 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 600mV/0.6V |
耗散功率Pc
Power Dissipation | 225mW/0.225W |
| Description & Applications | NPN EPITAXIAL PLANAR TRANSISTOR The HMBT2369 is designed for general purpose switching and amplifier applications. Low Collector Saturation Voltage High speed switching Transistor |
| 描述与应用 | NPN外延平面晶体管 专为通用开关和放大器应用。 低集电极饱和度电压 高速开关晶体管 |