Home
Cart0
Inventory:0 Min Order：10
Parameters
Related model

×

Parameters：

  • Model：HN1C03FU-B
  • Manufacturer：HUABAN
  • Date Code：05+ 05+
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：C3B
  • Package：SOT-363/US6

V(BR) CBO

Collector-Base Voltage

  50V

V(BR) CEO

Collector-Emitter Voltage

  20V
Collector Current(IC)  300MA
Transtion Frequency(fT)  30MHZ
DC Current Gain(hFE)  350~1200

VCE (sat)

Collector-Emitter Saturation Voltage

  0.1V
Power Dissipation （Pd）  200MW/0.2W
Description & Applications  Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) • Including two devices in SM6 (Super mini type with 6 leads) • High emitter-base voltage: VEBO = 25V (min) • High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA) • Low on resistance: RON = 1Ω (typ.)(IB = 5mA) • For Muting And Switching Applications
Technical Documentation Download Read Online

×

Online inquiry：

* From：
To：
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product：
HN1C03FU-B
*Title：
Message：
*Code：