| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
60V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) |
150mA/-150mA |
| 截止频率fT Transtion Frequency(fT) |
150MHz/120MHZ |
| 直流电流增益hFE DC Current Gain(hFE) |
120~400/120~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
100mV/-100mV |
| 耗散功率Pc Power Dissipation |
300mW |
| Description & Applications |
Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Q1: • High voltage and high current : VCEO = 50V, IC = 150mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: • High voltage and high current : VCEO = −50V, IC = −150mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) • Audio Frequency General Purpose Amplifier Applications |
| 描述与应用 |
特点 •东芝晶体管的硅NPN外延型（PCT工艺）硅PNP外延式（PCT的进程） Q1： •高电压和高电流:VCEO=50V，IC =150mA（最小值） •高HFE：HFE=120〜400 •优异的线性度：（IC=0.1毫安）/ HFE（IC=2毫安）=0.95（典型值） Q2： •高电压和高电流：VCEO=-50V，IC=电流150mA（最大值） •高HFE：HFE=120〜400 •优秀的HFE线性：HFE（IC=-0.1毫安的）/ HFE（IC=-2毫安，）= 0.95（典型值） •音频通用放大器应用 |