| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V/60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V/50V |
| 集电极连续输出电流IC Collector Current(IC) | -150mA/150mA |
| 截止频率fT Transtion Frequency(fT) | 120MHz/150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | -100mV/100mV |
| 耗散功率Pc Power Dissipation | 200mW |
| Description & Applications | Features • TOSHIBA Transistor Silicon PNP⋅NPN Epitaxial Type (PCT Process) Q1: • High voltage and high current : VCEO = -50V, IC = -150mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Q2: • High voltage and high current : VCEO = 60V, IC = 150mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) • Audio Frequency General Purpose Amplifier Applications |
| 描述与应用 | 特点 •东芝晶体管的硅PNP⋅NPN外延型（PCT工艺） Q1： •高电压和高电流：VCEO=-50V，IC=电流150mA（最大值） •高HFE：HFE=120〜400 •优秀的HFE线性：HFE（IC=-0.1毫安的）/ HFE（IC=-2毫安，）= 0.95（典型值） Q2： •高电压和高电流：VCEO= 60V，IC=150mA（最小值） •高HFE：HFE=120〜400 HFE HFE•优异的线性度：（IC=0.1毫安）/ HFE（IC=2毫安）=0.95（典型值） •音频通用放大器应用 |