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Parameters:

  • Model:HN4A06J
  • Manufacturer:HUABAN
  • Date Code:03+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:53
  • Package:SOT-153/SMV

V(BR) CBO

Collector-Base Voltage

 -120V

V(BR) CEO

Collector-Emitter Voltage

 -120V
Collector Current(IC)  -0.1A
Transtion Frequency(fT)  100MHZ
DC Current Gain(hFE)  200~700

VCE(sat)

Collector-Emitter Saturation Voltage

 -0.3V
Power Dissipation (Pd)  0.3W
Description & Applications  Features• TOSHIBA Transistor  Silicon PNP Epitaxial Type  (PCT Process)• High voltage : VCEO = −120V • High hFE : hFE = 200~700 • Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) • Audio Frequency General Purpose Amplifier
Technical Documentation Download Read Online

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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HN4A06J
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