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  • Model:IRFR420S
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:
  • Min Order:10
  • Mark/silk print/code/type:IRFR420
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current2.4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance3.3Ω/Ohm @1.4A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage2.0-4.0V
耗散功率Pd Power Dissipation4.2W
Description & Applications500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode. These devices are well uited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. • 2.3A, 500V, RDS(on) = 2.6Ω @VGS = 10 V • Low gate charge ( typical 14 nC) • Low Crss ( typical 10 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
描述与应用500V N沟道MOSFET 概述 这些N沟道增强型功率场效应 晶体管都采用飞兆半导体专有的,平面的,DMOS技术。 这种先进的技术,特别是针对已尽量减少对通态电阻,提供出色的开关性能,并承受高能量脉冲在雪崩和减刑模式。这些器件非常高效率开关模式电源,uited 基于半桥功率因数校正和电子镇流器 快速切换

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