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Parameters:

  • Model:IRLML2803TR
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:1B/B4/BB/BD/B6
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current1.2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.25Ω/Ohm @910mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.V
耗散功率Pd Power Dissipation540mW/0.54W
Description & ApplicationsUltra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching
描述与应用超低导通电阻 N沟道MOSFET SOT-23的脚印 薄型(高度<1.1mm) 可在磁带和卷轴 快速切换

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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IRLML2803TR
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