集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 60V |
集电极连续输出电流IC
Collector Current(IC) | 500mA/0.5A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 50 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 250mV/0.25V |
耗散功率Pc
Power Dissipation | 350mW/0.35W |
| Description & Applications | Driver Transistor • Collector-Emitter Voltage: VCEO = KST05: 60V KST06: 80V • Collector Power Dissipation: PC (max) = 350mW • Complement to KST55/57 |
| 描述与应用 | 驱动晶体管 •集电极 - 发射极电压VCEO = KST05：60V KST06：80V •集电极耗散功率：PC（最大值）=350MW •KST55/57补 |