| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
60V/-60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) |
150mA/-150mA |
| 截止频率fT Transtion Frequency(fT) |
80MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
120~240 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
100mV/-100mV |
| 耗散功率Pc Power Dissipation |
200mW |
| Description & Applications |
Features •EPITAXIAL PLANAR NPN/PNP TRANSISTOR •Including two devices in TES6.(Thin Extreme Super mini type with 6 pin.) •Simplify circuit design. •Reduce a quantity of parts and manufacturing process. •GENERAL PURPOSE APPLICATION. |
| 描述与应用 |
特点 •外延平面NPN/ PNP晶体管 •包括两个设备（薄至尊超级迷你型6针。在TES6。） •简化电路设计。 •减少了部件数量和制造工艺。 •通用应用。 |