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  • Model：MCH6613
  • Manufacturer：HUABAN
  • Date Code：05+ 05+
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：FM
  • Package：SOT-363/SC70-6/MCPH6

最大源漏极电压Vds
Drain-Source Voltage		30V/-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		10V/10V
最大漏极电流Id
Drain Current		350mA/-200mA
源漏极导通电阻Rds
Drain-Source On-State Resistance		12.8Ω@ VGS =1.5V, ID =10mA/54Ω@ VGS =-1.5V, ID =-1mA
开启电压Vgs（th）
Gate-Source Threshold Voltage		0.4~1.3V/-0.4~-1.4V
耗散功率Pd
Power Dissipation		800mW/0.8W
Description & ApplicationsUltrahigh-Speed Switching Applications Features • The MCH6613 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling high-density mounting. • Excellent ON-resistance characteristic. • 2.5V drive.
描述与应用超高速开关应用 特点 •MCH6613采用N沟道MOSFET和一个P沟道MOSFET，具有低导通电阻和高速开关，从而实现高密度安装。 •优秀的导通电阻特性。 •2.5V驱动。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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MCH6613
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