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Parameters:

  • Model:MJD112T4
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:2500
  • Min Order:10
  • Mark/silk print/code/type:MJD112
  • Package:TO-252/DPAK

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
100V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
100V
集电极连续输出电流IC
Collector Current(IC)
2A
截止频率fT
Transtion Frequency(fT)
25MHz
直流电流增益hFE
DC Current Gain(hFE)
500~2000
管压降VCE(sat)
Collector-Emitter Saturation Voltage
2V~3V
耗散功率Pc
Power Dissipation
Description & ApplicationsComplementary power Darlington transistors Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
描述与应用Complementary power Darlington transistors HFE线性度好 ■高FT  频率 ■单片达林顿配置 综合反平行集电极 - 发射极二极管

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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MJD112T4
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