| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 15V |
| 最大漏极电流Id Drain Current | 1.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.18Ω/Ohm @750mA,5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 800mW/0.8W |
| Description & Applications | N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount This advanced E–FET is a TMOS power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT–223 package which is designed for medium power surface mount applications. • Silicon Gate for Fast Switching Speeds • High Voltage − 240 Vdc • Low Drive Requirement • The SOT−223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. • Pb−Free Packages are Available |
| 描述与应用 | N沟道增强模式 硅栅TMOS E-FET？ SOT-223表面贴装 这种先进的E-FET是一个TMOS功率MOSFET设计 承受高能量的雪崩和减刑模式。 这个装置还具有低阈值电压而设计的，所以它是 全面加强与5伏特。这种新的节能设备也 提供漏极至源极二极管具有快速恢复时间。设计 低电压，高速开关应用在电源 用品，转换器和PWM马达控制，这些设备 特别适合于桥电路中二极管的速度和 换向安全工作领域是关键，并提供额外的 对意外的电压瞬变的安全边际。该设备是 坐落在SOT-223封装，是专为中等功率表面贴装应用。 •硅栅快速开关速度 •高电压 - 240 VDC •低驱动要求 •SOT-223包装可以使用波或回流焊接。 所形成的线索在焊接热应力吸收， 消除电路小片损坏的可能性。 •无铅包可用 |