集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 8V |
集电极连续输出电流IC
Collector Current(IC) | 2mA |
截止频率fT
Transtion Frequency(fT) | 5GHz |
直流电流增益hFE
DC Current Gain(hFE) | 30~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 50mW |
| Description & Applications | • The RF Line NPN Silicon High-Frequency Transistors Designed primarily for use in low power amplifiers to 1.0 GHz. Ideal for pagers and other battery operated systems where low power consumption is critical. • Low Power Consumption Characterized for IE = 0.1 to 1.0 mA • High Current–Gain — Bandwidth Product — fT = 5.0 GHz (Typ) @ IC = 1.0 mAdc • Low Noise Figure and High Power Gain @ f = 1.0 GHz — NF(matched) = 2.5 dB (Typ) GNF(matched) = 12.5 dB (Typ) • Guaranteed RF Parameters • Surface Mounted SOT–143 Offers Improved RF Performance Lower Package Parasitics High Gain • Available in tape and reel packaging: T1 suffix = 3,000 units per reel |
| 描述与应用 | •RF线NPN硅高频晶体管 设计主要用于到1.0 GHz的低功耗放大器。非常适于 传呼机和其他低功耗电池供电系统 关键的。 •低功耗的特点IE=0.1〜1.0毫安 •高电流增益 - 带宽积 - FT= 5.0千兆赫（典型值）@ IC=1.0 MADC •低噪声指数和高功率增益@ F =1.0 GHz的 - NF（匹配）=2.5分贝（典型值） GNF（匹配）=12.5分贝（典型值） •保证的射频参数 •表面贴装SOT-143提供了改进的RF性能 较低的封装寄生效应 高增益 •可在磁带和卷轴包装： T1后缀=3000单位每卷 |