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  • Model:MTD3055VLT4
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:2500
  • Min Order:10
  • Mark/silk print/code/type:305
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage15V
最大漏极电流Id Drain Current2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.040Ω/Ohm @10A,4V
开启电压Vgs(th) Gate-Source Threshold Voltage1.0-2.1V
耗散功率Pd Power Dissipation7.4W
Description & ApplicationsPower MOSFET 12 Amps, 60 Volts N−Channel DPAK−3 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Pb−Free Packages are Available
描述与应用功率MOSFET 12安培,60伏特 N沟道DPAK-3 这种功率MOSFET的设计,可以承受高能量的 雪崩和减刑模式。专为低电压,高 高速开关应用在电源供应器,转换器和电源 马达控制,这些设备特别适合于桥 电路二极管的速度和换向安全工作领域 对意外的电压瞬变的关键,并提供额外的安全边际 •雪崩能量 •源漏二极管恢复时间等同于离散 快恢复二极管 •二极管的特点是桥电路中使用 •IDSS和VDS(上) 指定高温 •无铅包可用

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MTD3055VLT4
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