最大源漏极电压Vds
Drain-Source Voltage | -60V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -20V |
最大漏极电流Id
Drain Current | -340mA/-0.34A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 7.5Ω@ VGS = -4.8V, ID = -250mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -1~-3.5V |
耗散功率Pd
Power Dissipation | 960mW/0.96W |
| Description & Applications | Dual P-Channel Power Trench MOSFET General Description These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch. Features • Low gate charge • Fast switching speed • High performance trench technology for low RDS(ON) • SuperSOT-6 package |
| 描述与应用 | 双P沟道功率沟槽MOSFET 概述 这些双P沟道增强模式功率场效应晶体管都采用飞兆半导体专有的沟道技术。这非常高密度工艺已旨在最大限度地减少通态电阻，提供坚固可靠的性能和快速切换。本产品特别适合需要低电流高侧开关低电压应用。 特点 •低栅极电荷 •开关速度快 •高性能沟道技术的低RDS（ON） •SuperSOT-6封装 |