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  • Model：NDC7003P
  • Manufacturer：HUABAN
  • Date Code：05+
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：3
  • Package：SOT-163/SOT23-6/SSOT-6

最大源漏极电压Vds
Drain-Source Voltage		-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage		-20V
最大漏极电流Id
Drain Current		-340mA/-0.34A
源漏极导通电阻Rds
Drain-Source On-State Resistance		7.5Ω@ VGS = -4.8V, ID = -250mA
开启电压Vgs（th）
Gate-Source Threshold Voltage		-1~-3.5V
耗散功率Pd
Power Dissipation		960mW/0.96W
Description & ApplicationsDual P-Channel Power Trench MOSFET General Description These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch. Features • Low gate charge • Fast switching speed • High performance trench technology for low RDS(ON) • SuperSOT-6 package
描述与应用双P沟道功率沟槽MOSFET 概述 这些双P沟道增强模式功率场效应晶体管都采用飞兆半导体专有的沟道技术。这非常高密度工艺已旨在最大限度地减少通态电阻，提供坚固可靠的性能和快速切换。本产品特别适合需要低电流高侧开关低电压应用。 特点 •低栅极电荷 •开关速度快 •高性能沟道技术的低RDS（ON） •SuperSOT-6封装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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NDC7003P
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