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Parameters:

  • Model:NDT452AP
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:2500
  • Min Order:10
  • Mark/silk print/code/type:452A
  • Package:SOT-223

最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.052Ω @-5A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1--2.8V
耗散功率Pd
Power Dissipation
300mW/0.3W
Description & ApplicationsHigh density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package.
描述与应用高密度电池设计极低的RDS(ON) 一种广泛使用的高功率和电流处理能力 表面贴装封装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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NDT452AP
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