最大源漏极电压Vds
Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -8V |
最大漏极电流Id
Drain Current | -1.65A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 135mΩ@ VGS = -2.5V, ID = -2.9A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.45~-1.5V |
耗散功率Pd
Power Dissipation | 500mW/0.5W |
| Description & Applications | Power MOSFET Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Miniature TSOP−6 Surface Mount Package • Pb−Free Package is Available Applications • Power Management in Portable and Battery−Powered Products, i.e.:Cellular and Cordless Telephones, and PCMCIA Cards |
| 描述与应用 | 功率MOSFET 特点 •超低RDS（上） •更高的效率延长电池寿命 •微型TSOP-6表面贴装封装 •无铅包装是可用 应用 •电源管理在便携式和电池供电产品，即：蜂窝，无绳电话，PCMCIA卡 |