最大源漏极电压Vds
Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -12V |
最大漏极电流Id
Drain Current | -880mA/-0.88A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 1Ω@ VGS = -1.8V, ID = -0.2A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.45V |
耗散功率Pd
Power Dissipation | 272mW/0.272W |
| Description & Applications | Trench Small Signal MOSFET Features • Leading Trench Technology for Low RDS(ON) Performance • Small Footprint Package (SC70-6 Equivalent) • ESD Protected Gate • Pb-Free Package is Available Applications • Load/Power Management • Charging Circuits • Load Switching • Cell Phones, Computing, Digital Cameras, MP3s and PDAs |
| 描述与应用 | 海沟小信号MOSFET 特点 •领先沟道技术低RDS（ON）性能 •小型封装（SC70-6等效） •ESD保护门 •无铅包装是可用 应用 •负载/功率管理 •充电电路？ •负载开关 •手机，电脑，数码相机，MP3和掌上电脑 |