最大源漏极电压Vds
Drain-Source Voltage | 8V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -4V |
漏极电流(Vgs=0V)IDSS
Drain Current | 300mA |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | |
耗散功率Pd
Power Dissipation | 1.7W |
| Description & Applications | 250mW GaAs Power FET (Pb-Free Type) Up to 2.7 GHz frequency band Beyond +22 dBm output power Up to +41dBm Output IP3 High Drain Efficiency SOT-89 SMT Package (Pb-free) Low Noise Figure Wireless communication system Cellular, PCS, PHS, W-CDMA, WLAN |
| 描述与应用 | 250MW砷化镓功率场效应管（无铅型） 高达2.7 GHz频段 超越+22 dBm的输出功率 高达+41 dBm输出IP3 漏极效率高 SOT-89贴片封装（无铅） 低噪声图 无线通信系统 |