集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC
Collector Current(IC) | -1A |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | 300~800 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc
PoWer Dissipation | 350mW/0.35W |
| Description & Applications | 40 V low VCE(sat) PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Enhanced performance over SOT23 1A standard packaged transistor. APPLICATIONS • General purpose switching and muting • LCD back lighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). |
| 描述与应用 | 40伏的低VCE（sat）的PNP晶体管 特点 •低集电极 - 发射极饱和电压 •高电流能力 •提高设备的可靠性，由于产生的热量减少 •增强的性能超过SOT231A标准包装的晶体管。 应用 •通用开关和静音 •LCD背照明 •供电线路开关电路 •电池驱动设备（手机，摄像机和手持设备）。 |