| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 0.21 |
| Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.21 |
| 直流电流增益hFE DC Current Gain(hFE) | 100 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 600mW/0.6W |
| Description & Applications | Features • NPN resistor-equipped double transistor • Transistors with built-in bias resistors (R1 typ. 10 kΩ andR2 typ. 47 kΩ) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. |
| 描述与应用 | 特点 •NPN电阻配备双晶体管 •晶体管内置偏置电阻（R1典型值10KΩ/Ohm的1和R 2（典型值）47KΩ/Ohm的。） •晶体管之间没有相互干扰 •简化电路设计 •减少元件数量和电路板空间 应用 •通用开关和放大 •逆变器和接口电路 •电路驱动。 |