最大源漏极电压Vds
Drain-Source Voltage | 30 V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | 30 V |
漏极电流(Vgs=0V)IDSS
Drain Current | －2.0~－35.0mA |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | 1.0~4.0V |
耗散功率Pd
Power Dissipation | 300mW/0.3W |
| Description & Applications | PMBFJ176 P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes. They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. |
| 描述与应用 | PMBFJ176 P-沟道硅场效应晶体管 说明 硅对称p沟道结场效应晶体管的塑料超小型SOT23封装。他们的目的是为应用模拟开关，换向器等采用SMD技术。比较特别的是漏极和源极连接的互换性。 |