| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
| Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 30 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | Features • NPN/PNP resistor-equipped transistors; • Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 10 kΩ each) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs |
| 描述与应用 | 特点 •NPN/ PNP电阻配备晶体管;晶体管不同极性和内置的偏置电阻R1和R2（典型值10KΩ/Ohm的） •晶体管之间没有相互干扰 •简化电路设计 •减少元件数量和电路板空间 应用 •低电流外设驱动程序 •通用晶体管数字应用的更换 •控制IC投入 |