集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −60V |
集电极连续输出电流IC
Collector Current(IC) | −600mA/- 0.6A |
截止频率fT
Transtion Frequency(fT) | 200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~300 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -400mV/-0.4V |
耗散功率Pc
PoWer Dissipation | 1.5W |
| Description & Applications | PNP Silicon Epitaxial transistor i This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • Complement to PZT2222AT1 • The SOT-223 package can be soldered using wave or reflow |
| 描述与应用 | PNP硅外延晶体管 这PNP硅外延晶体管线性和开关应用中使用而设计的。该设备是设在SOT-223封装，是专为中等功率表面贴装应用。 •互补型PZT2222AT1 •SOT-223封装，可以焊接使用波或回流 |