| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 50mA |
| 基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 4.7KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 30 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.05W/50mW |
| Description & Applications | Features • Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • Incorporating a bias resistor into a transistor reduces the number of parts, which enables the manufacture of ever more compact equipment and saves assembly cost. • Complementary to RN2101FS |
| 描述与应用 | 特性 •开关，逆变电路，接口电路和驱动器电路应用 结合成晶体管的偏置电阻器，可以减少部件的数量，从而使制造的更加紧凑的设备，节省组装成本。 •对管是RN2101FS |