Please log in first
Home
Cart0

×

Parameters:

  • Model:RN2104FT
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:4000
  • Min Order:10
  • Mark/silk print/code/type:YD
  • Package:SOT-623/TESM

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-100mA/-0.1A
基极输入电阻R1 Input Resistance(R1)47KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)80
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation0.1W/100mW
Description & ApplicationsFeatures • Transistor Silicon PNP Epitaxial Type (PCT Process) • Built-in bias resistors • Simplified circuit design • Fewer parts and simplified manufacturing process • Complementary to RN1101~RN1106 Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •晶体管的硅PNP外延型(PCT工艺) •内置偏置电阻 •简化电路设计更少的部件和简化制造工艺 •互补RN1101~~ RN1106 应用 •开关,逆变电路,接口电路和驱动器电路应用

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
RN2104FT
*Title:
Message:
*Code: