Please log in first
Home
Cart0

×

Parameters:

  • Model:RN2110FV
  • Manufacturer:HUABAN
  • Date Code:04NOPB 04+NOPB
  • Standard Package:8000
  • Min Order:100
  • Mark/silk print/code/type:YK
  • Package:SOT-723/VESM

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-100mA/-0.1A
基极输入电阻R1 Input Resistance(R1)4.7KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)120~400
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFeatures • Transistor Silicon PNP Epitaxial Type (PCT Process) • Built-in bias resistors • Simplified circuit design • Reduced quantity of parts and manufacturing process • Complementary to RN1110FV~RN1111FV Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •晶体管的硅PNP外延型(PCT工艺) •内置偏置电阻 •简化电路设计 •减少数量的零件和制造工艺 •互补到RN1110FV〜RN1111FV的 应用 •开关,逆变电路,接口电路和驱动器电路应用

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
RN2110FV
*Title:
Message:
*Code: