| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 0.1 |
| Q2基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.1 |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 截止频率fT Transtion Frequency(fT) | 250MHz/200MHz |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | Features • TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) • Includeing two devices in US6 (ultra super mini type with 6 leads) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
| 描述与应用 | 特点 •东芝晶体管的硅PNP外延型硅NPN外延型（PCT工艺）（PCT工艺） •包括，两个设备US6（超超级迷你型6引线） •内置偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 应用 •开关，逆变电路，接口电路和驱动器电路应用。 |