| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-50V/40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-50V/40V |
| 集电极连续输出电流IC Collector Current(IC) |
-100mA/100mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
22KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
|
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
|
| Q2基极输入电阻R1 Input Resistance(R1) |
4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
|
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
|
| 直流电流增益hFE DC Current Gain(hFE) |
120/300 |
| 截止频率fT Transtion Frequency(fT) |
250MHz/200MHz |
| 耗散功率Pc Power Dissipation |
100mW/0.1W |
| Description & Applications |
Features • TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) • Two devices are incorporated into an Ultra-Super-Mini (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 •东芝晶体管的硅PNP NPN外延式（PCT程序）（偏置电阻内置晶体管） •两个设备都纳入一个超超级迷你（6针）封装。 •将偏置电阻晶体管，减少了部件数量。减少零件计数使能越来越紧凑的设备和制造，节省组装成本。 应用 •开关，逆变电路，接口电路和驱动器电路应用 |