| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.22 |
| 直流电流增益hFE DC Current Gain(hFE) | 33 |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Features •Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type •Built-in bias resistor (R1=2.2kΩ,R2=10kΩ) APPLICATION •Inverted circuit,switching circuit,interface circuit, driver circuit |
| 描述与应用 | 特点 •开关应用硅PNP外延型晶体管，电阻 •内置偏置电阻（R1=2.2KΩ，R2=10KΩ） 应用 •倒电路，开关电路，接口电路，驱动电路 |