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Parameters:

  • Model:RTL035N03
  • Manufacturer:HUABAN
  • Date Code:05NOPB 05NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:pm
  • Package:TUMT6/SOT-363/SC70-6/TSSOP6/SC-88

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current3.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance79mΩ@ VGS =2.5V, ID =3.5A
开启电压Vgs(th) Gate-Source Threshold Voltage0.5~1.5V
耗散功率Pd Power Dissipation2W
Description & Applications2.5V Drive Nch MOS FET Features 1) Low on-resistance. 2) Space saving, small surface mount package . 3) Low voltage drive. Applications Switching
描述与应用2.5V驱动N沟道MOS FET 特点 1)低导通电阻。 2)节省空间,小的表面贴装封装。 3)低电压驱动。 应用 开关

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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RTL035N03
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