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Parameters:

  • Model:SGM2014M
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:D
  • Package:SOT-143/M-254

最大源漏极电压Vds
Drain-Source Voltage
12V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-5V
漏极电流(Vgs=0V)IDSS
Drain Current
8mA-28mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-2.5V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsGaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. UHF band amplifier,mixer and oscillator Low voltage operation Low noise High gain Low cross-modulation High stability Built gate-protection diode
描述与应用砷化镓N沟道双栅MES FET 描述 在该SGM2014AM是一个N沟道双栅砷化镓 MES 场效应管为UHF频段的低噪声放大。这FET是一个适用于广泛的应用,包括电视调谐器,移动设备和DBS中频放大器。 超高频频段的放大器,混频器和振荡器 低电压操作 低噪音 高增益 低交叉调制 高稳定性 内置栅极保护二极管

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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SGM2014M
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