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  • Model:SI4953DY
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:
  • Min Order:10
  • Mark/silk print/code/type:4953
  • Package:SO8/SOIC8/SOP8

最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-20V
最大漏极电流Id
Drain Current
-4.9A
源漏极导通电阻Rds
Drain-Source On-State Resistance
95mΩ@ VGS = -4.5V, ID = -3.6A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1V
耗散功率Pd
Power Dissipation
2W
Description & ApplicationsDual P-Channel 30-V(D-S) MOSFET FEATURES 100% Rg Tested
描述与应用双P沟道30-V(D-S)的MOSFET 特点 100%的Rg测试

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SI4953DY
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