最大源漏极电压Vds
Drain-Source Voltage | 20V/-20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 12V/12V |
最大漏极电流Id
Drain Current | 3.1A/-2.1A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 134mΩ@ VGS =2.5V, ID =2.3A/260mΩ@ VGS =-2.5V, ID =-1.7A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.6~1.5V/-0.6~-1.5V |
耗散功率Pd
Power Dissipation | 1.1W |
| Description & Applications | Complementary 20-V (D-S) MOSFET |
| 描述与应用 | 互补的 20-V（D-S）的MOSFET |