最大源漏极电压Vds
Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 12V |
最大漏极电流Id
Drain Current | 400mA/0.4A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 800mΩ@ VGS = 4V, ID = 200mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.6~1.1V |
耗散功率Pd
Power Dissipation | 300mW/0.3W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications ●Small package ●Low on resistance : Ron = 0.8 Ω (max) (@VGS = 4 V) Ron = 1.2 Ω (max) (@VGS = 2.5 V) ●Low gate threshold voltage |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 ●小型封装 ●低导通电阻RON =0.8Ω（最大值）（@ VGS=4 V） RON=1.2Ω（最大）（@ VGS= 2.5 V） ●低栅极阈值电压 |