最大源漏极电压Vds
Drain-Source Voltage | -30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 20V |
最大漏极电流Id
Drain Current | -4.5A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 60mΩ@ VGS = -10V, ID = -2.2A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.8~-2.0V |
耗散功率Pd
Power Dissipation | 2W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U-MOSII) NOTEBOOK PC PORTABLE EQUIPMENTS APPLICATIONS Low drain-source on resistance High forward transfer admittance Low leakage current Enhancement-model |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS型（U-MOSII） 笔记本电脑 便携式设备应用 低漏源电阻 高正向转移导纳 低漏电流 增强模型 |