| Description & Applications |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
• LOW NOISE:
Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA
Q2:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA
• HIGH GAIN:
Q1: |S21E|
2 = 8.5 dB TYP at f = 2 GHz, VCE = 3 V,
lc = 10 mA
Q2: |S21E|
2 = 3.5 dB TYP at f = 2 GHz, VCE = 1 V,
lc = 3 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS
(Q1: NE685, Q2: NE688)
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